BCV27 datasheet(1/4 Pages) DGNJDZ

Part #	BCV27

Description	SOT-23 Plastic-Encapsulate Transistors

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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1 / 4 page

BCV27

TRANSISTOR (NPN)

FEATURES

 High Collector Current

 High Current Gain

MARKING:FF

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

30

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current

500

mA

PC

Collector Power Dissipation

300

mW

RΘJA

Thermal Resistance From Junction To Ambient

416

℃/W

Operation Junction and Storage Temperature Range

℃

TJ,Tstg

-55～+150

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100µA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=10mA, IB=0

30

V

Emitter-base breakdown voltage

V(BR)EBO

IE=10µA, IC=0

10

V

Collector cut-off current

ICBO

VCB=30V, IE=0

0.1

µA

Emitter cut-off current

IEBO

VEB=4V, IC=0

0.1

µA

hFE(1)

VCE=1V, IC=100µA

4000

hFE(2)

VCE=5V, IC=10mA

10000

hFE(3)

VCE=5V, IC=100mA

20000

DC current gain

hFE(4)

VCE=5V, IC=0.5A

4000

Collector-emitter saturation voltage

VCE(sat)

IC=100mA, IB=0.1mA

1

V

Base-emitter saturation voltage

VBE(sat)

IC=100mA, IB=0.1mA

1.5

V

Transition frequency

fT

VCE=5V,IC=50mA, f=100MHz

170

MHz

Collector output capacitance

Cob

VCB=10V, IE=0, f=1MHz

3.5

pF

SOT–23

1. BASE

2. EMITTER

3. COLLECTOR

F F

FF = Device code

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

1/4

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