BCW61B datasheet(2/4 Pages) DGNJDZ

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ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-10µA, IE=0

-32

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA, IB=0

-32

Emitter-base breakdown voltage

V(BR)EBO

IE=-10µA, IC=0

-5

Collector cut-off current

ICBO

VCB=-32V, IE=0

-0.02

µA

Emitter cut-off current

IEBO

VEB=-4V, IC=0

-0.02

µA

BCW61B

BCW61C

hFE(1)

VCE=-5V, IC=-10μA

BCW61D

100

BCW61A

120

220

BCW61B

180

310

BCW61C

250

460

hFE(2)

VCE=-5V, IC=-2mA

BCW61D

380

630

BCW61A

BCW61B

BCW61C

100

DC current gain

hFE(3)

VCE=-1V, IC=-50mA

BCW61D

110

IC=-10mA, IB=-0.25mA

-60

-250

Collector-emitter saturation voltage

VCE(sat)

IC=-50mA, IB=-1.25mA

-120

-550

IC=-10mA, IB=-0.25mA

-0.6

-0.85

Base-emitter saturation voltage

VBE(sat)

IC=-50mA, IB=-1.25mA

-0.68

-1.05

Base-emitter voltage

VBE

VCE=-5V, IC=-2mA

-0.6

-0.75

Transition frequency

VCE=-5V,IC=-10mA, f=100MHz

100

MHz

Collector output capacitance

Cob

VCB=-10V, IE=0, f=1MHz

4.5

Emitter input capacitance

Cib

VEB=-0.5V, IC=0, f=1MHz

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