BCX69 datasheet(1/3 Pages) DGNJDZ

Part #	BCX69

Description	SOT-89-3L Plastic-Encapsulate Transistors

PDF	3 Pages

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Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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FEATURES

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary type: BCX68 (NPN)

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-25

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-1

A

PC

Collector Dissipation

0.8

W

Operation Junction and

Storage Temperature Range

℃

TJ,Tstg

-

55~150

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-10μA , IE=0

-25

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-30mA , IB=0

-20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-1μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-25V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB=-5V, IC=0

-0.1

μA

hFE (1)

1)

VCE=-1V, IC=-500mA

85

100

160

375

160

250

375

hFE(2)

1)

VCE=-10V, IC=-5mA

50

DC current gain

BCX69

BCX69-10

BCX69-16

BCX69-25

hFE(3)

1)

VCE=-1V, IC=-1A

60

Collector-emitter saturation voltage

VCE(sat)

IC=-1A, IB=-100mA

-0.5

V

Base-emitter

voltage

VBE(ON)

1)

IC=-5mA, VCE=-10V

IC=-1A, VCE=-1V

-0.6

-1

V

Transition frequency

f T

VCE=-5V, IC=-100mA

f=20MHz

100

MHz

1) Pulse test: t ≤=300µs, D = 2%

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

MARKING

CE1

CF1

CG1

BCX69

BCX69-10

BCX69-16

CH1

BCX69 TRANSISTOR (PNP)

BCX69-25

85-375

85-160

100-250

160-375

SOT-89-3L Plastic-Encapsulate Transistors

DONGGUAN NANJING ELECTRONICS LTD.,

1/3

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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