BF620 datasheet(1/3 Pages) DGNJDZ

Part #	BF620

Description	SOT-89-3L Plastic-Encapsulate Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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BF620

TRANSISTOR (NPN)

FEATURES

Low current (max. 50mA)

High voltage (max. 300V).

Video output stages.

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

50

mA

PC

Collector Power Dissipation

500

mW

Junction Temperature

℃

TJ,Tstg

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=100μA, IE=0

300

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=1mA, IB=0

300

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=200V, IE=0

10

nA

Emitter cut-off current

IEBO

VEB=5V, IC=0

50

nA

DC current gain

hFE

VCE=20V, IC=25mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=30mA, IB=5mA

0.6

V

Transition frequency

fT

VCE=10V, IC=10mA, f=100MHz

60

MHz

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

MARKING：DC

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

DC

SOT-89-3L Plastic-Encapsulate Transistors

DONGGUAN NANJING ELECTRONICS LTD.,

1/3

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

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BF620 Datasheet(PDF) 1 Page - Nanjing International Group Co

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