BF821 datasheet(1/3 Pages) DGNJDZ

Part #	BF821

Description	SOT-23 Plastic-Encapsulate Transistors

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	DGNJDZ [Nanjing International Group Co]

Direct Link	http://www.dgnjdz.com/

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1 / 3 page

BF821/BF823

TRANSISTOR (PNP)

FEATURES

Low current (max.-50 mA)

High voltage (max.-300V)

Telephony and professional communication equipment.

MARKING: BF821:1W, BF823: 1Y

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

BF821

BF823

-300

-250

V

VCEO

Collector-Emitter Voltage

BF821

BF823

-300

-250

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-50

mA

PC

Collector Power Dissipation

0.25

W

Operation Junction and Storage Temperature Range

℃

TJ,Tstg

-55~150

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA, IE=0

BF821

BF823

-300

-250

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA, IB=0

BF821

BF823

-300

-250

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-200V,IE=0

-0.01

μA

Emitter cut-off current

IEBO

VEB= -5V,IC=0

-0.05

μA

DC current gain

hFE

VCE= -20V,IC=-25mA

50

Collector-emitter saturation voltage

VCE(sat)

IC=-30mA,IB= -5mA

-0.8

V

Transition frequency

fT

VCE=-10V, IC= -10mA,f=100MHz

60

MHz

Collector output capacitance

Cob

VCB=-30V,IE=0,f=1MHz

1.6

pF

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

DONGGUAN NANJING ELECTRONICS LTD.,

Dongguan Nanjing Electronics Ltd.

www.dgnjdz.com

1/3

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