Nexperia

PMBT2222AM

40 V, 600 mA NPN switching transistor

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1]

-

-

500

K/W

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

006aab603

10-5

10

10-2

10-4

102

10-1

tp (s)

10-3

103

1

102

10

103

Zth(j-a)

(K/W)

1

duty cycle =

1

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

0

FR4 PCB, standard footprint

Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values

10. Characteristics

Table 7. Characteristics

Tamb = 25 °C unless otherwise specified

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V(BR)CBO

collector-base

breakdown voltage

IC = 100 µA; IE = 0 A

75

-

-

V

V(BR)CEO

collector-emitter

breakdown voltage

IC = 2 mA; IB = 0 A

40

-

-

V

V(BR)EBO

emitter-base

breakdown voltage

IC = 0 A; IE = 100 µA

6

-

-

V

VCB = 60 V; IE = 0 A

-

-

10

nA

ICBO

collector-base cut-off

current

VCB = 60 V; IE = 0 A; Tj = 125 °C

-

-

10

µA

IEBO

emitter-base cut-off

current

VEB = 5 V; IC = 0 A

-

-

10

nA

VCE = 10 V; IC = 100 µA

35

-

-

VCE = 10 V; IC = 1 mA

50

-

-

VCE = 10 V; IC = 10 mA

75

-

-

VCE = 10 V; IC = 10 mA; Tamb = -55 °C

35

-

-

VCE = 10 V; IC = 150 mA

[1]

100

-

300

VCE = 1 V; IC = 150 mA

[1]

50

-

-

hFE

DC current gain

VCE = 10 V; IC = 500 mA

[1]

40

-

-

PMBT2222AM

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Product data sheet

21 September 2018

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