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2SC5976 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SC5976
Description  Transistor Silicon NPN Epitaxial Type
PDF  5 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC5976 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SC5976
2004-07-01
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
⎯
⎯
0.1
μ
A
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
⎯
⎯
0.1
μ
A
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
30
⎯
⎯
V
hFE (1)
VCE = 2 V, IC = 0.3 A
250
⎯
400
DC current gain
hFE (2)
VCE = 2 V, IC = 1.0 A
120
⎯
⎯
Collector-emitter saturation voltage
VCE (sat)
IC = 1.0 A, IB =33mA
⎯
⎯
0.14
V
Base-emitter saturation voltage
VBE (sat)
IC = 1.0 A, IB =33mA
⎯
⎯
1.10
V
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f=1MHz
18
pF
Rise time
tr
⎯
40
⎯
Storage time
tstg
⎯
320
⎯
Switching time
Fall time
tf
See Figure 1.
VCC ≈ 12V, RL = 12 Ω
IB1 = −IB2 = 33 mA
⎯
25
⎯
ns
Figure 1
Switching Time Test Circuit & Timing Chart
MARKING
W
W
Part No. (or abbreviation code)
Lot code (month)
Lot code (year)
Dot: even year
No dot: odd year
IB2
IB1
20
µs
Output
Input
IB2
IB1
VCC
Duty cycle
< 1%



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