BU2506DF datasheet(3/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2506DF

Fig.1. Switching times waveforms.

Fig.2. Switching times definitions.

Fig.3. Switching times test circuit.

Fig.4. Typical DC current gain. h

FE = f (IC)

parameter V

Fig.5. Typical base-emitter saturation voltage.

BEsat = f (IC); parameter IC/IB

Fig.6. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

VCE

ICsat

IBend

64us

26us

20us

TRANSISTOR

DIODE

0.01

100

0.1

Tj = 25 C

Tj = 125 C

h FE

IC / A

ICsat

90 %

10 %

IBend

- IBM

0.1

1.2

1.1

0.9

0.8

0.7

0.6

0.5

0.4

Tj = 25 C

Tj = 125 C

VBESAT / V

IC / A

IC/IB =

+ 150 v nominal

adjust for ICsat

Cfb

D.U.T.

IBend

-VBB

Rbe

0.1

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

Tj = 25 C

Tj = 125 C

VCESAT / V

IC / A

IC/IB =

September 1997

Rev 1.400

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