BU2507DF datasheet(4/6 Pages) PHILIPS

4 / 6 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2507DF

Fig.7. Typical base-emitter saturation voltage.

BEsat = f (IB); parameter IC

Fig.8. Typical losses.

TOT = f (IB); IC = 4 A; f = 16 kHz

Fig.9. Typical collector storage and fall time.

ts = f (I

B); tf = f (IB); IC = 4.0 A; Tj = 85˚C; f = 16 kHz

Fig.10. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C = f (Tmb)

Fig.11. Transient thermal impedance.

th j-hs = f(t); parameter D = tp/T

0.5

1.5

IB / A

IC = 4 A

IC = 3 A

Ths = 25 C

Ths = 85 C

BU2507DF/DX

VBEsat / V

0.6

0.7

0.8

0.9

1.1

1.2

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

with heatsink compound

BU2507AF/DF/AX/DX

0.5

1.5

0.1

IB / A

Ptot / W

Ths = 25 C

Ths = 85 C

1E-06

1E-4

10E-2

1E+00

0.001

0.01

0.1

BU2507AF/X/DF/X

t / s

Zth / K/W

D =

D = 0

0.02

0.05

0.1

0.2

0.5

1.5

BU2507AF/AX/Df/DX85ts/tf

IB / A

ts/tf/ us

September 1997

Rev 1.200

BU2507DF Datasheet(PDF) 4 Page - NXP Semiconductors

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