BU2507DX datasheet(3/6 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2507DX

Fig.1. Switching times waveforms.

Fig.2. Switching times definitions.

Fig.3. Switching times test circuit.

Fig.4. High and low DC current gain. h

FE = f (IC)

CE = 1 V

Fig.5. High and low DC current gain. h

FE = f (IC)

CE = 5 V

Fig.6. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

VCE

ICsat

IBend

64us

26us

20us

TRANSISTOR

DIODE

BU2507DF/X

0.01

0.1

100

IC / A

hFE

Ths = 25 C

Ths = 85 C

VCE = 1 V

ICsat

90 %

10 %

IBend

- IBM

BU2507DF/X

0.01

0.1

100

IC / A

hFE

VCE = 5 V

Ths = 25 C

Ths = 85 C

+ 150 v nominal

adjust for ICsat

1mH

12nF

D.U.T.

IBend

-VBB

Rbe

0.1

100

0.01

0.1

IC / A

VCESAT / V

Ths = 25 C

Ths = 85 C

IC/IB = 3

IC/IB = 4

IC/IB = 5

BU2507DF/X

September 1997

Rev 1.200

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