BU2520AX datasheet(4/8 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2520AX

Fig.7. Typical DC current gain. h

FE = f (IC)

parameter V

Fig.8. Typical base-emitter saturation voltage.

BEsat = f (IC); parameter IC/IB

Fig.9. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

Fig.10. Typical base-emitter saturation voltage.

BEsat = f (IB); parameter IC

Fig.11. Typical collector-emitter saturation voltage.

CEsat = f (IB); parameter IC

Fig.12. Typical turn-off losses. T

j = 85˚C

Eoff = f (I

B); parameter IC; parameter frequency

0.1

IC / A

hFE

100

Tj = 25 C

Tj = 125 C

5 V

1 V

IB / A

VBESAT / V

1.2

1.1

0.9

0.8

0.7

0.6

Tj = 25 C

Tj = 125 C

IC=

8 A

6 A

5 A

4 A

0.1

IC / A

VBESAT / V

1.2

1.1

0.9

0.8

0.7

0.6

0.5

0.4

Tj = 25 C

Tj = 125 C

IC/IB=

0.1

IB / A

VCESAT / V

0.1

Tj = 25 C

Tj = 125 C

IC = 4 A

5 A

6 A

8 A

0.1

IC / A

VCESAT / V

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

100

Tj = 25 C

Tj = 125 C

IC/IB =

0.1

IB / A

Eoff / uJ

1000

100

IC = 6 A

5 A

16 kHz

32 kHz

September 1997

Rev 2.200

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