Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2520DF

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65 % ; clean and dustfree

-

2500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

22

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

2

V

-

-

1.0

mA

I

CES

V

-

-

2.0

mA

T

I

EBO

Emitter cut-off current

V

100

-

300

mA

BV

EBO

Emitter-base breakdown voltage

I

7.5

13.5

-

V

R

be

Base-emitter resistance

V

-

50

-

Ω

V

CEOsust

Collector-emitter sustaining voltage

I

800

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

-

5.0

V

V

BEsat

Base-emitter saturation voltage

I

-

-

1.1

V

h

FE

DC current gain

I

-

13

-

h

FE

I

5

7

9.5

V

F

Diode forward voltage

I

-

-

2.2

V

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

C

c

Collector capacitance

I

115

-

pF

Switching times (16 kHz line

I

deflection circuit)

I

(-dI

t

s

Turn-off storage time

4.5

5.5

µs

t

f

Turn-off fall time

0.35

0.5

µs

2 Measured with half sine-wave voltage (curve tracer).

September 1997

2

Rev 1.400