BU2522AX datasheet(4/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2522AX

Fig.7. Typical DC current gain. h

FE = f (IC)

CE = 5 V

Fig.8. Typical base-emitter saturation voltage.

BEsat = f (IC); parameter IC/IB

Fig.9. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

Fig.10. Typical base-emitter saturation voltage.

BEsat = f (IB); parameter IC

Fig.11. Typical turn-off losses. T

j = 85˚C

Poff = f (I

B); parameter IC = 6 A; f = 64 kHz

Fig.12. Typical collector storage and fall time.

ts = f (I

B); tf = f (IB); parameter IC = 6A; Tj = 85˚C;

f = 64 kHz

0.01

0.1

100

IC / A

BU2522A

100

Tj = 25 C

Tj = -40 C

Tj = 85 C

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

IB / A

1.2

1.1

0.9

0.8

0.7

0.6

BU2522A

VBESAT / V

Tj = 25 C

Tj = 85 C

IC =

BU2522AF/DF/AX/DX

0.5

1.5

100

IB / A

PTOT / W

Ths = 25 C

Ths = 85 C

0.1

IC / A

1.2

1.1

0.9

0.8

0.7

0.6

0.5

0.4

VBESAT / V

BU2522A

Tj = 25 C

Tj = 85 C

IC/IB =

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

IB / A

ts, tf / us

BU2522AF

3.5

2.5

1.5

0.5

IC =

0.1

IC / A

VCESAT / V

0.1

0.01

100

BU2522A

Tj = 25 C

Tj = 85 C

IC/IB =

September 1997

Rev 2.300

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