BU2523AF datasheet(3/6 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2523AF

Fig.3. Switching times test circuit.

Fig.4. High and low DC current gain. h

FE = f (IC)

CE = 1 V

Fig.5. High and low DC current gain. h

FE = f (IC)

CE = 5 V

Fig.6. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

Fig.7. Typical base-emitter saturation voltage.

BEsat = f (IB); parameter IC

Fig.8. Typical losses.

TOT = f (IB); IC =5.5 A; f = 64 kHz

+ 150 v nominal

adjust for ICsat

Cfb

T.U.T.

IBend

-VBB

0.1

100

0.01

0.1

Ths = 25 C

Ths = 85 C

IC/IB = 10

IC/IB = 5

VCEsat / V

BU2523AF/X

IC / A

BU2523AF/X

0.01

0.1

100

VCE = 1 V

Ths = 25 C

Ths = 85 C

hFE

IC / A

0.6

0.7

0.8

0.9

1.1

1.2

VBEsat / V

BU2523AF/X

IB / A

IC = 6 A

IC = 4.5 A

Ths = 25 C

Ths = 85 C

BU2523AF/X

0.01

0.1

100

VCE = 5 V

Ths = 25 C

Ths = 85 C

hFE

IC / A

BU2523AF/DF/AX/DX

0.5

1.5

100

PTOT / W

IB / A

Ths = 25 C

Ths = 85 C

September 1997

Rev 1.100

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