BU2525AW datasheet(3/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2525AW

Fig.3. Switching times waveforms.

Fig.4. Switching times definitions.

Fig.5. Switching times test circuit (BU2525A).

Fig.6. Typical DC current gain. h

FE = f (IC)

parameter V

Fig.7. Typical base-emitter saturation voltage.

BEsat = f (IC); parameter IC/IB

Fig.8. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

VCE

ICsat

IBend

32us

13us

10us

TRANSISTOR

DIODE

0.1

IC / A

hFE

BU2525A

100

Tj = 25 C

Tj = 125 C

5 V

1 V

ICsat

90 %

10 %

IBend

- IBM

0.1

IC / A

VBESAT / V

BU2525A

1.2

1.1

0.9

0.8

0.7

0.6

0.5

0.4

Tj = 25 C

Tj = 125 C

IC/IB=

+ 150 v nominal

adjust for ICsat

Cfb

T.U.T.

IBend

-VBB

0.1

IC / A

VCESAT / V

BU2525A

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

100

Tj = 25 C

Tj = 125 C

IC/IB =

September 1997

Rev 1.100

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