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SCHOTTKY DIE SPECIFICATION
TYPE: MBR560
60 V 5 A ( Low Ir)
Single Anode
SYM
Die Sort UNIT
DC Blocking Voltage:
Ir=1mA(for wafer form)
VRRM
63
Volt
Ir=0.5mA (for dice form)
IFAV
Amp
VF MAX
0.645
Volt
0.82
IR MAX
0.08
mA
Cj MAX
pF
IFSM
Amp
Tj
°C
TSTG
°C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DIM
um
2
Mil
2
A
1838
72.36
B
1738
68.4
C
1758
69.2
D
254
10
305
12
Operating Junction Temperature
Storage Temperatures
ITEM
Die Size
DICE OUTLINE DRAWING
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
VR= 60 Volt, Ta=25°C
ELECTRICAL CHARACTERISTICS
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
General Description:
120
-65 to +125
-65 to +125
0.655
0.83
@ 5 Amperes, Ta=25°C
@ 15 Amperes, 25°C
Maximum Instantaneous Reverse Voltage
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Thickness (Max)
0.09
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Micro-Electro-Magnetical Tech Co.
Spec. Limit
60
5
B
C
A
Top-side Metal
D
SiO2 Passivation
P+ Guard Ring
Back-side Metal
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