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2N7002

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Product data sheet

Rev. 7 — 8 September 2011

2 of 13

Nexperia

2N7002

60 V, 300 mA N-channel Trench MOSFET

3.

Ordering information

4.

Marking

[1]

% = placeholder for manufacturing site code

5.

Limiting values

Table 3.

Ordering information

Type number

Package

Name

Description

Version

2N7002

TO-236AB

plastic surface-mounted package; 3 leads

SOT23

Table 4.

Marking codes

Type number

Marking code[1]

2N7002

12%

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

25 °C

≤ Tj ≤ 150 °C

-

60

V

VDGR

drain-gate voltage

25 °C

≤ Tj ≤ 150 °C; RGS =20 kΩ

-60

V

VGS

gate-source voltage

-30

30

V

VGSM

peak gate-source voltage

pulsed; tp ≤ 50 µs; δ = 0.25

-40

40

V

ID

drain current

VGS =10V; Tsp =25 °C; see Figure 1;

see Figure 3

-

300

mA

VGS =10V; Tsp = 100 °C; see Figure 1

-

190

mA

IDM

peak drain current

pulsed; tp ≤ 10 µs; Tsp =25 °C; see

Figure 3

-1.2

A

Ptot

total power dissipation

Tsp =25 °C; see Figure 2

-0.83

W

Tj

junction temperature

-65

150

°C

Tstg

storage temperature

-65

150

°C

Source-drain diode

IS

source current

Tsp = 25 °C

-

300

mA

ISM

peak source current

pulsed; tp ≤ 10 µs; Tsp =25 °C

-

1.2

A