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BSP030 Datasheet(PDF) 6 Page - Nexperia B.V. All rights reserved |
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BSP030 Datasheet(HTML) 6 Page - Nexperia B.V. All rights reserved |
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6 / 14 page  Philips Semiconductors BSP030 N-channel enhancement mode field-effect transistor Product specification Rev. 04 — 26 July 2000 5 of 13 9397 750 07268 © Philips Electronics N.V. 2000. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =10 µA; VGS =0V Tj =25 °C30 43 − V Tj = −55 °C27 −− V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C 1 2 2.8 V Tj = 150 °C 0.6 −− V Tj = −55 °C −− 3.5 V IDSS drain-source leakage current VDS = 24 V; VGS =0V Tj =25 °C − 10 100 nA Tj = 150 °C −− 10 µA IGSS gate-source leakage current VGS = ±20 V; VDS =0V − 10 100 nA RDSon drain-source on-state resistance VGS =10V; ID =5A; Figure 7 and 8 Tj =25 °C − 20 30 m Ω VGS =5V; ID = 2.5 A; Figure 7 and 8 Tj =25 °C − 30 50 m Ω Tj = 150 °C −− 85 m Ω Dynamic characteristics gfs forward transconductance VDS =5V; ID = 5.5 A; Figure 11 − 12 − S Qg(tot) total gate charge ID = 5 A; VDS =15V; VGS =10V; Figure 14 − 24 40 nC Qgs gate-source charge − 3.3 − nC Qgd gate-drain (Miller) charge − 7.4 − nC Ciss input capacitance VGS =0V; VDS =24V; f = 1 MHz; Figure 12 − 770 − pF Coss output capacitance − 265 − pF Crss reverse transfer capacitance − 180 − pF td(on) turn-on delay time VDD = 15 V; RD =15 Ω; VGS =10V; RG =6 Ω − 8 − ns tr turn-on rise time − 10 − ns ton turn-on time − 18 35 ns td(off) turn-off delay time − 24 − ns tf turn-off fall time − 20 − ns toff turn-off time − 44 150 ns |
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