BST82 datasheet(7/14 Pages) NEXPERIA

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Philips Semiconductors

BST82

N-channel enhancement mode ﬁeld-effect transistor

Product speciﬁcation

Rev. 03 — 26 July 2000

6 of 13

9397 750 07223

Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon

Fig 5.

Output characteristics: drain current as a

function of drain-source voltage; typical values.

Fig 6.

Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

Tj =25 °C

Fig 7.

Drain-source on-state resistance as a function

of drain current; typical values.

Fig 8.

Normalized drain-source on-state resistance

factor as a function of junction temperature.

03aa63

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

0.45

0.5

0.2 0.4 0.6 0.8

1.2 1.4 1.6 1.8

VDS (V)

(A)

3.5 V

Tj = 25

VGS = 10V

4 V

3 V

5 V

03aa65

0.1

0.2

0.3

0.4

0.5

0.6

0.7

012345678

VGS (V)

(A)

VDS > ID X RDSon

Tj = 25

150oC

03aa64

0.1

0.2

0.3

0.4

0.5

ID (A)

RDSon

(

Ω)

VGS = 10V

Tj = 25

4 V

3.5V

3 V

5 V

03aa29

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

2.4

2.6

2.8

-60

-20

100

140

180

(

DSon

DSon 25 C

()

----------------------------

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