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IRC4BC40F Datasheet(PDF) 1 Page - International Rectifier |
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IRC4BC40F Datasheet(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 49 IC @ TC = 100°C Continuous Collector Current 27 A ICM Pulsed Collector Current Q 200 ILM Clamped Inductive Load Current R 200 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy S 15 mJ PD @ TC = 25°C Maximum Power Dissipation 160 PD @ TC = 100°C Maximum Power Dissipation 65 TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm from case ) °C Mounting torque, 6-32 or M3 screw. 10 lbf•in (1.1N•m) IRG4BC40F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR PD - 91454B E C G n-channel Features Features Features Features Features • Fast: optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs Benefits VCES = 600V VCE(on) typ. = 1.50V @VGE = 15V, IC = 27A 4/17/2000 Parameter Typ. Max. Units RθJC Junction-to-Case ––– 0.77 RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W RθJA Junction-to-Ambient, typical socket mount ––– 80 Wt Weight 2.0 (0.07) ––– g (oz) Thermal Resistance Absolute Maximum Ratings W TO-220AB www.irf.com 1 |
Similar Part No. - IRC4BC40F |
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Similar Description - IRC4BC40F |
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