2SC5761 datasheet(2/14 Pages) NEC

Part #	2SC5761

Description	NPN SiGe RF TRANSISTOR FOR LOW NOISE & HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)

PDF	14 Pages

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Manufacturer	NEC [NEC]

Direct Link	http://www.nec.com/

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2 / 14 page

Data Sheet PU10212EJ02V0DS

2SC5761

ELECTRICAL CHARACTERISTICS (TA = +25

°C)

Parameter

Symbol

Test Conditions

MIN.

TYP.

MAX.

Unit

DC Characteristics

Collector Cut-off Current

ICBO

VCB = 5 V, IE = 0 mA

−−

200

Emitter Cut-off Current

IEBO

VBE = 0.5 V, IC = 0 mA

−−

200

DC Current Gain

hFE

Note 1

VCE = 2 V, IC = 5 mA

200

−

400

−

RF Characteristics

Insertion Power Gain

S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz

16.0

18.0

−

Noise Figure

VCE = 2 V, IC = 5 mA, f = 2 GHz,

ZS = Zopt

−

0.9

1.1

Reverse Transfer Capacitance

Cre

Note 2

VCB = 2 V, IE = 0 mA, f = 1 MHz

−

0.17

0.22

Maximum Stable Power Gain

MSG

Note 3

VCE = 2 V, IC = 20 mA, f = 2 GHz

18.0

20.0

−

Gain 1 dB Compression Output Power

PO (1 dB)

VCE = 2 V, IC = 20 mA, f = 2 GHz

−

12.0

−

dBm

3rd Order Intermodulation Distortion

Output Intercept Point

OIP3

VCE = 2 V, IC = 20 mA, f = 2 GHz

−

22.0

−

dBm

Notes 1. Pulse measurement: PW

≤ 350

µs, Duty Cycle ≤ 2%

2. Collector to base capacitance when the emitter grounded

3. MSG =

hFE CLASSIFICATION

Rank

Marking

T16

hFE Value

200 to 400

S21

S12

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