BU2720DF datasheet(4/7 Pages) PHILIPS

4 / 7 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2720DF

Fig.7. DC current gain. h

FE = f (IC)

Parameter T

(Low and high gain)

Fig.8. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

Fig.9. Typical base-emitter saturation voltage.

BEsat = f (IB); parameter IC

Fig.10. Limit P

tot; Tj = 85˚C

tot = f (IB(end)); IC = 4.5 A; f = 16 kHz

Fig.11. Limit P

tot; Tj = 85˚C

tot = f (IB(end)); IC = 5.5 A; f = 16 kHz

Fig.12. Limit storage and fall time.

s = f (IB); tf = f (IB); Parameter IC; Tj = 85˚C; f = 16 kHz

0.01

0.1

100

Ths = 25 C

Ths = 85 C

VCE = 1 V

hFE

BU2720/22AF

IC / A

0.5

1.0

1.5

2.0

PTOT / W

BU2720AF

IB / A

IC = 4.5 A

f = 16 kHz

Tj = 85 C

0.01

0.1

100

Tj = 85 C

Tj = 25 C

IC/IB = 8

IC/IB = 4

VCEsat / V

BU2720AF

IC / A

0.5

1.5

2.5

PTOT / W

BU2720AF

IB / A

IC = 5.5 A

f = 16 kHz

Tj = 85 C

0.5

1.5

0.6

0.7

0.8

0.9

Tj = 25 C

Tj = 85 C

IC = 5.5 A

4.5 A

VBEsat / V

BU2720AF

IB / A

0.5

1.5

2.5

ts/tf / us

BU2720AF

IC = 5.5 A

IC = 4.5 A

IB / A

September 1997

Rev 1.300

BU2720DF Datasheet(PDF) 4 Page - NXP Semiconductors

BU2720DF Datasheet(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL