Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2722AF

GENERAL DESCRIPTION

New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in

horizontal deflection circuits of high resolution monitors. Designed to withstand V

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1700

V

V

CEO

Collector-emitter voltage (open base)

-

825

V

I

C

Collector current (DC)

-

10

A

I

CM

Collector current peak value

-

25

A

P

tot

Total power dissipation

T

-

45

W

V

CEsat

Collector-emitter saturation voltage

I

-

1.0

V

I

Csat

Collector saturation current

f = 64 kHz

4.5

-

A

t

s

Storage time

I

2.9

3.5

µs

PINNING - SOT199

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

base

2

collector

3

emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CESM

Collector-emitter voltage peak value

V

-

1700

V

V

CEO

Collector-emitter voltage (open base)

-

825

V

I

C

Collector current (DC)

-

10

A

I

CM

Collector current peak value

-

25

A

I

B

Base current (DC)

-

10

A

I

BM

Base current peak value

-

14

A

-I

B(AV)

Reverse base current

average over any 20 ms period

-

150

mA

-I

BM

Reverse base current peak value

1

-6

A

P

tot

Total power dissipation

T

25 ˚C

-

45

W

T

stg

Storage temperature

-65

150

˚C

T

j

Junction temperature

-

150

˚C

ESD LIMITING VALUES

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge capacitor voltage Human body model (250 pF,

-

10

kV

1.5 k

Ω)

12

3

case

b

c

e

1 Turn-off current.

September 1997

1

Rev 1.200