BU2722DF datasheet(4/7 Pages) PHILIPS

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Philips Semiconductors

Preliminary specification

Silicon Diffused Power Transistor

BU2722DF

Fig.5. DC current gain. h

FE = f (IC)

Parameter T

(Low and high gain)

Fig.6. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

Fig.7. Typical base-emitter saturation voltage.

BEsat = f (IB); parameter IC

Fig.8. Limit storage and fall time.

s = f (IB); tf = f (IB); Ths = 85˚C; f = 64 kHz

Fig.9. Normalised power dissipation.

PD% = 100

⋅PD/PD 25˚C = f (T

hs)

Fig.10. Transient thermal impedance.

th j-hs = f(t); parameter D = tp/T

BU2720/22DF

0.01

0.1

100

Ths = 25 C

Ths = 85 C

VCE = 1 V

hFE

IC / A

0123

0.1

IB / A

ts, tf / us

BU2722AF

BU2722DF

0.01

0.1

100

Ths = 85 C

Ths = 25 C

IC/IB = 8

IC/IB = 4

VCEsat / V

IC / A

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

with heatsink compound

0.5

1.5

0.6

0.7

0.8

0.9

IC = 5.5 A

4.5 A

VBEsat / V

BU2722DF

IB / A

Ths = 85 C

Ths = 25 C

1E-06

1E-04

1E-02

1E+00

t / s

Zth / (K/W)

D = 0

0.02

0.05

0.1

0.2

0.5

D =

0.1

0.01

0.001

November 1995

Rev 1.000

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