BU2727AX datasheet(4/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU2727AX

Fig.7. DC current gain. h

FE = f (IC)

Parameter T

(Low and high gain)

Fig.8. Typical collector-emitter saturation voltage.

CEsat = f (IC); parameter IC/IB

Fig.9. Typical base-emitter saturation voltage.

BEsat = f (IB); parameter IC

Fig.10. Normalised power dissipation.

PD% = 100

⋅PD/PD 25˚C = f (T

hs)

Fig.11. Transient thermal impedance.

th j-hs = f(t); parameter D = tp/T

Fig.12. Test Circuit RBSOA.

CC = 150 V; -VBB = 1 - 4 V;

C = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH;

FB = 1 - 3 nF; IB(end) = 0.8 - 4 A

0.01

0.1

100

hFE

BU2727A/AF

IC / A

VCE = 1 V

Ths = 25 C

Ths = 85 C

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

with heatsink compound

1E-06

1E-04

1E-02

1E+00

t / s

Zth / (K/W)

BU2525AF

0.1

0.01

0.001

D =

D = 0

0.02

0.05

0.1

0.2

0.5

0.1

100

0.01

0.1

BU2727A/AF

VCEsat / V

Ths = 85 C

Ths = 25 C

IC/IB = 12

IC/IB = 5

IC / A

IBend

-VBB

T.U.T.

VCC

VCL

CFB

234

0.6

0.7

0.8

0.9

VBEsat / V

BU2727A/AF

IB / A

IC = 6 A

4 A

Ths = 85 C

Ths = 25 C

September 1997

Rev 1.200

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