STP8NK100Z datasheet(3/13 Pages) STMICROELECTRONICS

Part #	STP8NK100Z

Description	N-CHANNEL 1000V - 1.60OHM - 6.5A - TO-220 - TO-220FP Zener-Protected SuperMESH TM MOSFET

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 13 page

STF8NK100Z - STP8NK100Z

2 Electrical characteristics

3/13

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Table 5.

Dynamic

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown

Voltage

ID = 1mA, VGS= 0

1000

IDSS

Zero Gate Voltage Drain

Current (VGS = 0)

VDS = Max Rating,

VDS = Max Rating,Tc = 125°C

µA

IGSS

Gate Body Leakage Current

(VDS = 0)

VGS = ±20V

µA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID = 100 µA

33.75

4.5

RDS(on)

Static Drain-Source On

Resistance

VGS= 10 V, ID= 3.15 A

1.60

1.85

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs Note 6

Forward Transconductance

VDS =15V, ID=3.15 A

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VDS =25V, f=1 MHz, VGS=0

2180

174

Coss eq.

Note 5

Equivalent Output

Capacitance

VGS=0V, VDS=0 to 800V

Qgs

Qgd

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

VDD=800V, ID = 6.3A

VGS =10V

(see Figure 17)

102

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