BU4506AX datasheet(4/6 Pages) PHILIPS

Part #	BU4506AX

Description	Silicon Diffused Power Transistor

PDF	6 Pages

Scroll/Zoom	100%

Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 6 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4506AX

Fig.9. Typical base-emitter saturation voltage.

Fig.10. Typical collector storage and fall time.

C =3 A; Tj = 85˚C; f = 16kHz

Fig.11. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C

Fig.12. Transient thermal impedance.

0.6

0.7

0.8

0.9

1.1

1.2

VBESAT / V

IB / A

IC = 3 A

Ths = 25 C

Ths = 85 C

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

with heatsink compound

0.5

1.5

IB / A

ts/tf/ us

ICsat = 3 A

Ths = 85 C

Freq = 16 kHz

0.001

0.01

0.1

1E-06

1E-05

1E-04

1E-03

1E-02

1E-01

1E+00 1E+01

t / s

D = 0.5

0.2

0.1

0.05

0.02

D = 0

D = tp/T

BU4506DF/DX

Zth (K/W)

July 1999

Rev 1.000

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