Small-signal ultra-fast switching schottky diode in bare die form

Rev 1.1

13/07/23

30V 200mA Schottky Diode – BAT54

Features:

Die Dimensions in µm (mils)

230 (9.05)

350 (13.78)

ANODE



5 nanosecond max switching speed



Low forward voltage drop



200mA current rating



Guard-Ring for over-voltage protection



High reliability tested grades & matched

characteristic options.

Ordering Information

The following part suffixes apply:



No suffix - MIL-STD-750 /2073 Visual Inspection



“H” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class H LAT



“K” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.

www.siliconsupplies.com\quality\bare-die-lot-qualification

ANODE

CHIP BACKSIDE IS CATHODE

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (400 per tray capacity)



Sawn Wafer on Tape – By specific request



Unsawn Wafer – By specific request



Die Thickness <> 180µm(7 Mils) – On request



With additional electrical selection – On request

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Die Size (with scribe line)

350 x 350

13.78 x 13.781

µm

mils

Anode Pad Size

230 x 230

9.05 x 9.05

µm

mils

Die Thickness

180 (±15)

7.09 (±0.59)

µm

mils

Top Metal Composition

Al

Back Metal Composition

AuAs