BU4507AF datasheet(4/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4507AF

Fig.7. High and low DC current gain.

Fig.8. Test Circuit RBSOA.

Fig.9. Reverse bias safe operating area. T

j ≤ Tjmax

Fig.10. Typical collector-emitter saturation voltage.

Fig.11. Typical base-emitter saturation voltage.

Fig.12. Typical collector storage and fall time.

C =4 A; Tj = 85˚C; f = 16kHz

0.001

0.01

0.1

100

BU4507AF

Ths = 25 C

Ths = 85 C

VCE = 5V

hFE

IC / A

0.1

100

0.01

0.1

IC/IB = 5

Ths = 25 C

Ths = 85 C

BU4507AF/X/Z

VCEsat / V

IC / A

0.5

1.5

2.5

0.6

0.7

0.8

0.9

1.1

1.2

Ths = 25 C

Ths = 85 C

IC = 4 A

VBEsat / V

IB / A

BU4507AF/X/Z

IBend

-VBB

T.U.T.

VCC

VCL

CFB

0.5

1.5

2.5

ICsat = 4 A

Ths = 85 C

Freq = 16 kHz

ts/tf / us

IB / A

100

VCE / V

IC / A

BU2507

1500

1000

August 1998

Rev 1.100

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