BU4508AX datasheet(4/7 Pages) PHILIPS

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Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU4508AX

Fig.7. High and low DC current gain.

Fig.8. Typical collector-emitter saturation voltage.

Fig.9. Typical base-emitter saturation voltage.

Fig.10. Typical collector storage and fall time.

C =5 A; Tj = 85˚C; f = 16kHz

Fig.11. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C

Fig.12. Transient thermal impedance.

0.001

0.01

0.1

100

hFE

IC / A

VCE = 5V

Ths = 25 C

Ths = 85 C

0.5

1.5

2.5

ts/tf / us

IB / A

ICsat = 5 A

Ths = 85 C

Freq = 16 kHz

0.1

100

0.01

0.1

Ths = 25 C

Ths = 85 C

IC/IB = 5

BU4508AF/X/Z

IC / A

VCEsat / V

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

with heatsink compound

0.5

1.5

2.5

0.6

0.7

0.8

0.9

1.1

1.2

IC = 5 A

IC = 4 A

VBEsat / V

IB / A

Ths = 25 C

Ths = 85 C

BU4508AF/X/Z

1.0E-07

1.0E-05

1.0E-03

1.0E-01

1.0E+01

0.001

0.01

0.1

0.2

0.1

0.05

0.02

0.5

BU4508AF

t / s

Zth K/W

D =

May 1998

Rev 1.000

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