1997 Aug 14

2

Philips Semiconductors

Product specification

Silicon diffused power transistors

BU506F; BU506DF

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-emitter peak voltage

−

1500

V

collector-emitter voltage

open base

−

700

V

collector saturation current

−

3A

collector current (DC)

see Figs 2 and 3

−

5A

collector current (peak value)

see Figs 2 and 3

−

8A

base current (DC)

−

3A

base current (peak value)

−

5A

total power dissipation

−

20

W

storage temperature

−65

+150

°C

junction temperature

−

150

°C

ISOLATION CHARACTERISTICS

CHARACTERISTICS

SYMBOL

PARAMETER

TYP.

MAX.

UNIT

isolation voltage from all terminals to external heatsink (peak value)

−

1500

V

isolation capacitance from collector to external heatsink

12

−

pF

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector-emitter sustaining

voltage

see Figs 5 and 6

700

−−

V

collector-emitter saturation

voltage

see Figs 7 and 8

−−

1V

base-emitter saturation voltage

−−

1.3

V

−

1.5

2.2

V

collector-emitter cut-off current

−−

0.5

mA

−−

1mA

emitter-base cut-off current

−−

10

mA

DC current gain

2.25

−−

see Fig.10

613

30

Switching times in horizontal deflection circuit (see Fig.11)

storage time

−

6.5

−µs

fall time

−

0.7

−µs