BU508AW datasheet(4/6 Pages) PHILIPS

4 / 6 page

Philips Semiconductors

Product specification

Silicon Diffused Power Transistor

BU508AW

Fig.9. Typical collector-emitter saturation voltage.

CEsat = f (IB); parameter IC

Fig.10. Transient thermal impedance.

th j-hs = f(t); parameter D = tp/T

Fig.11. Normalised power dissipation.

PD% = 100

⋅P

D/PD 25˚C = f (Ths)

Fig.12. Forward bias safe operating area. T

mb < 25˚C

(1) P

tot max line.

(2) Second-breakdown limit (independent of

temperature).

Region of permissible DC operation.

Permissible extension for repetitive operation.

BU508AD

0.1

IC = 4.5A

IC = 6A

IC = 3A

VCESAT/V

IB/A

100

120

140

Ths / C

PD%

Normalised Power Derating

120

110

100

with heatsink compound

1.0E-07

1.0E-5

1.0E-3

1.0E-1

1.0E+1

0.001

0.01

0.1

0.2

0.1

0.05

0.02

0.5

bu508aw

t / s

Zth K/W

D =

July 1998

Rev 1.200

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