Philips Semiconductors

Objective specification

Silicon Diffused Power Transistor

BUJ101AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

isol

Repetitive peak voltage from all

R.H.

≤ 65% ; clean and dustfree

-

1500

V

three terminals to external

heatsink

C

isol

Capacitance from T2 to external f = 1 MHz

-

12

-

pF

heatsink

STATIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CES

Collector cut-off current

1

V

-

-

0.1

mA

I

CES

V

-

-

1.0

mA

T

I

EBO

Emitter cut-off current

V

-

-

1

mA

V

CEOsust

Collector-emitter sustaining voltage

I

400

-

-

V

L = 25 mH

V

CEsat

Collector-emitter saturation voltage

I

-

-

0.8

V

V

BEsat

Base-emitter saturation voltage

I

-

-

1.0

V

h

FE

DC current gain

I

10

-

32

DYNAMIC CHARACTERISTICS

T

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

Switching times (resistive load)

I

R

t

on

Turn-on time

-

0.5

µs

t

s

Turn-off storage time

-

3.5

µs

t

f

Turn-off fall time

-

0.3

µs

Switching times (inductive load)

I

-V

t

s

Turn-off storage time

-

1.5

µs

t

f

Turn-off fall time

40

100

ns

Switching times (inductive load)

I

-V

t

s

Turn-off storage time

-

1.8

µs

t

f

Turn-off fall time

-

200

ns

1 Measured with half sine-wave voltage (curve tracer).

August 1998

2

Rev 1.000