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IGW60T120 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IGW60T120
Description  Fied Stop IGBT
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IGW60T120 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  IGW60T120 Datasheet HTML 1Page - Inchange Semiconductor Company Limited IGW60T120 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
IGW60T120
Fied Stop IGBT
DESCRIPTION
·
Low Saturation Voltage:VCE(sat)=2.8V@IC=75A
·
High Current Capability
·
High Input Impedance
·
Fast Swithching
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Synchronous Rectification in SMPS
·
Automotive Chargers
·
UPS,PFC
·
High Voltage Auxiliaries
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCES
Collector-Emitter Voltage
1200
V
VGES
Gate-Emitter Voltage
±
30
V
IC
Collector Current-Continuous
@ TC=25℃
150
A
ICM
Pulsed Collector Current
225
A
IF
Diode Forward Current
@ TC=25℃
75
A
IFM
Pulsed Diode Maximum Forward
current
@ TC=25℃
225
A
PD
Power Dissipation ,
TC=25℃
833
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature Range
-55~175
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
0.18
℃
/W


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