DMN61D9UDWQ

Document number: DS43034 Rev. 2 - 2

2 of 8

www.diodes.com

June 2021

© Diodes Incorporated

DMN61D9UDWQ

Marking Information

Date Code Key

Year

2021

2022

2023

2024

2025

2026

2027

2028

2029

2030

2031

2032

Code

I

J

K

L

M

N

O

P

R

S

T

U

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code

1

2

3

4

5

6

7

8

9

O

N

D

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 5V

Steady

State

TA = +25°C

TA = +70°C

ID

318

254

mA

Maximum Continuous Body Diode Forward Current (Note 6)

IS

318

mA

Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)

IDM

0.9

A

Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)

ISM

0.9

A

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

PD

0.37

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

340

°C/W

Total Power Dissipation (Note 6)

PD

0.44

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

285

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

9D1 = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: I = 2021)

M = Month (ex: 9 = September)

S

1

D

1

D

2

S

2

G

1

G

2

9D1 YM