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IRGP4068DPBF Datasheet(PDF) 2 Page - International Rectifier |
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IRGP4068DPBF Datasheet(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRGP4068DPbF/IRGP4068D-EPbF 2 www.irf.com Notes: VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω. Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V (BR)CES safely. Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Ref.Fig V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ——V VGE = 0V, IC = 100µA e CT6 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —0.30— V/°C VGE = 0V, IC = 1mA (25°C-175°C) CT6 —1.65 2.14 IC = 48A, VGE = 15V, TJ = 25°C 4,5,6 VCE(on) Collector-to-Emitter Saturation Voltage — 2.0 — V IC = 48A, VGE = 15V, TJ = 150°C 8,9,10 —2.05— IC = 48A, VGE = 15V, TJ = 175°C VGE(th) Gate Threshold Voltage 4.0 — 6.5 V VCE = VGE, IC = 1.4mA 8,9 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -21 — mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C) 10,11 gfe Forward Transconductance — 32 — S VCE = 50V, IC = 48A, PW = 80µs ICES Collector-to-Emitter Leakage Current — 1.0 150 µA VGE = 0V, VCE = 600V — 450 1000 VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 0.96 1.05 V IF = 8.0A 7 —0.81 0.86 IF = 8.0A, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Ref.Fig Qg Total Gate Charge (turn-on) — 95 140 IC = 48A 18 Qge Gate-to-Emitter Charge (turn-on) — 28 42 nC VGE = 15V CT1 Qgc Gate-to-Collector Charge (turn-on) — 35 53 VCC = 400V IC = 48A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 1275 1481 µJ RG = 10Ω, L = 200µH,TJ = 25°C CT4 Energy losses include tail td(off) Turn-Off delay time — 145 176 µJ IC = 48A, VCC = 400V, VGE = 15V tf Fall time — 35 46 RG = 10Ω, L = 200µH,TJ = 25°C IC = 48A, VCC = 400V, VGE = 15V Eoff Turn-Off Switching Loss — 1585 — µJ RG = 10Ω, L = 200µH,TJ = 175°C CT4 Energy losses include tail td(off) Turn-Off delay time — 165 — µJ IC = 48A, VCC = 400V, VGE = 15V WF1 tf Fall time — 45 — RG=10Ω, L=200µH, TJ = 175°C Cies Input Capacitance — 3025 — VGE = 0V 17 Coes Output Capacitance — 245 — pF VCC = 30V Cres Reverse Transfer Capacitance — 90 — f = 1.0Mhz TJ = 175°C, IC = 192A 3 RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2 Rg = 10 Ω, VGE = +15V to 0V SCSOA Short Circuit Safe Operating Area 5 — — µs VCC = 400V, Vp =600V 16, CT3 Rg = 10 Ω, VGE = +15V to 0V WF2 Conditions |
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