PMPB24EP

30 V, P-channel Trench MOSFET

22 October 2018

Product data sheet

1. General description

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power

DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET technology.

2. Features and benefits

• Logic-level compatible

• Trench MOSFET technology

• Side wettable flanks for optical solder inspection

• Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm

• Exposed drain pad for excellent thermal conduction

3. Applications

• Charging switch for portable devices

• DC-to-DC converters

• Power management in battery-driven portable devices

• Hard disk and computing power management

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

-

-

-30

V

VGS

gate-source voltage

Tj = 25 °C

-20

-

20

V

ID

drain current

VGS = -10 V; Tamb = 25 °C; t ≤ 5 s

[1]

-

-

-9.5

A

Static characteristics

RDSon

drain-source on-state

resistance

VGS = -10 V; ID = -6.4 A; Tj = 25 °C

-

24

28

mΩ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.