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TLP181 Datasheet(PDF) 3 Page - Toshiba Semiconductor |
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TLP181 Datasheet(HTML) 3 Page - Toshiba Semiconductor |
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3 / 9 page ![]() TLP181 2002-09-25 3 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Forward current detating ∆IF / °C -0.7 (Ta ≥ 53°C) mA / °C Pulse forward current (100µs pulse, 100pps) IFP 1 A Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector -emitter voltage VCEO 80 V Emitter -collector valtage VECO 7 V Collector current IC 50 mA Collector power dissipation (1 Circuit) PC 150 mW Collector power dissipation derating (1 Circuit Ta ≥ 25°C) ∆PC / °C -1.5 mW / °C Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C Operating temperature range Topr -55~100 °C Lead soldering temperature Tsol 260 (10s) °C Total package power dissipation PT 200 mW Total package power dissipation derating (Ta ≥ 25°C) ∆PT / °C -2.0 mW / °C Isolation voltage (AC, 1min., R.H. ≤ 60%) (Note 1) BVS 3750 Vrms (Note 1) Device considered a two -terminal device: Pin1, 3 shorted together and pins 4, 6 shorted together Recommended Operating Conditions Characteristic Symbol Min. Typ. Max. Unit Supply voltage VCC ― 5 48 V Forward current IF ― 16 20 mA Collector current IC ― 1 10 mA Operating temperature Topr -25 ― 85 °C |
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