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2STN2360 Datasheet(PDF) 3 Page - STMicroelectronics |
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2STN2360 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 9 page ![]() 2STF2360 - 2STN2360 2 Electrical Characteristics 3/9 2 Electrical Characteristics Table 3. Electrical Characteristics (TCASE = 25°C; unless otherwise specified) Note: 1 Pulsed duration = 300 µs, duty cycle ≤1.5%. 2.1 Typical Characteristics (curves) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = -60V -100 nA IEBO Emitter Cut-off Current (IC = 0) VEB = -6V -100 nA VBE(on) Base-Emitter Voltage VCE = -2V IC = -100mA -630 -670 -730 mV VCE(sat) Note: 1 Collector-Emitter Saturation Voltage IC = -2A _ _ IB = -100mA IC = -3A __ IB = -150mA -250 -350 -320 -500 mV mV VBE(sat) Note: 1 Base-Emitter Saturation Voltage IC = -2A _ IB = -100mA -0.89 -1.2 V hFE Note: 1 DC Current Gain IC = -100mA_ VCE = -2V IC = -1A _ VCE = -2V 80 160 280 400 td tr ts tf RESISTIVE LOAD Delay Time Rise Time Storage Time Fall Time IC = -3A VCC = -10V 10 75 250 35 15 100 350 50 ns ns ns ns fT Transition Frequency IC = -0.1A ___ VCE =-10V 130 MHz Figure 1. DC Current Gain Figure 2. DC Current Gain |
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