SIE808DF datasheet(2/3 Pages) VISHAY

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Vishay Siliconix

SPICE Device Model SiE808DF

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

2.3

On-State Drain Current

ID(on)

VDS ≥ 5 V, VGS = 10 V

2562

VGS = 10 V, ID = 25 A

0.0013

Drain-Source On-State Resistance

rDS(on)

VGS = 4.5 V, ID = 25 A

0.0022

0.0021

Ω

Forward Transconductance

gfs

VDS = 10 V, ID = 25 A

234

Forward Voltage

VSD

IS = 10 A

0.84

0.80

Dynamic

Input Capacitance

Ciss

6664

8800

Output Capacitance

Coss

1585

1600

Reverse Transfer Capacitance

Crss

VDS = 10 V, VGS = 0 V, f = 1 MHz

472

600

VDS = 1 0V, VGS = 10 V, ID = 20 A

121

102

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

VDS = 10 V, VGS = 4.5 V, ID = 20 A

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

www.vishay.com

Document Number: 74167

S-60411

Rev. A, 20-Mar-06

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