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MH204 Datasheet(PDF) 1 Page - WJ Communication. Inc. |
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MH204 Datasheet(HTML) 1 Page - WJ Communication. Inc. |
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1 / 2 page ![]() WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6620 • e-mail: sales@wj.com • Web site: www.wj.com April 2002 The Communications Edge TM Advanced Product Information MH204 High Dynamic Range Cellular Band MMIC Mixer Product Features • +30 dBm IIP3 • RF 890 – 960 MHz • LO 1190 – 1310 MHz • IF 300 – 350 MHz • +17 dBm Drive Level • Low Cost SOIC-8 Package • No External Bias Required Product Description The MH204 is a passive GaAs MESFET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ’s MH204 uses patented techniques to realize greater than +30 dBm Input IP3 at an LO drive level of +17 dBm when used in a simple application circuit as an upconverting or downconverting configuration. This single monolithic integrated circuit does not require any external baluns or bias elements. Typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in 2.5G and 3G systems using the cellular and GSM frequency bands. Functional Diagram Function Pin No. LO IF & RF* GND 2 5 1,3,4,6,8 * 4 external components (inductors & capacitors) are required to diplex the signal Specifications Parameters1 Units Minimum Typical Maximum Comments Frequency Range: RF MHz 890 960 LO MHz 1190 1310 IF MHz 300 350 SSB Conversion Loss dB 9.0 9.5 Noise Figure dB 9.5 Input IP32 dBm +30 Input P1dB dBm TBD Isolation: L-R dB 25 L-I dB 50 R-I dB TBD Return Loss: dB LO Port -8 LO Drive Level dBm +17 1. Data was taken using an application board shown on the following page, with a high side LO at +17 dBm in an downconverting application at 25°C. 2. Input IP3 was measured with two tones with an input power of -5 dBm / tone separated by 1 MHz. Absolute Maximum Rating3 Application Circuit Parameters Rating Operating Case Temperature -40° to +85 °C Storage Temperature -65° to +100 °C Maximum Input LO Power4 +21 dBm 3. Operation of this device above any of these parameters may cause permanent damage. 4. Total sum of LO port and RF port power should not to exceed +23 dBm. 1 2 3 4 8 7 6 5 RF C1 8.2 pF IF C2 3.9 pF L2 12 nH L1 23 nH LO All components are of size 0402 |
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