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RT6316C Datasheet(PDF) 22 Page - Richtek Technology Corporation |
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RT6316C Datasheet(HTML) 22 Page - Richtek Technology Corporation |
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22 / 25 page ![]() RT6316B/C 22 DS6316B/C-01 November 2020 www.richtek.com © Copyright 2020 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. Figure 9. Layout Guide of RT6316C Figure 8. Layout Guide of RT6316B GND NC LX BOOT VIN EN PGND 6 1 2 4 5 3 7 Rboot COUT VOUT L GND CIN VIN The input capacitor must be placed as close to the IC as possible for noise immunity and phase ring. LX should be connected to inductor by wide and short trace, and Do NOT use any via for LX. Keep sensitive components away from this area. The VIN trace should be wide enough for high current density application. The number of vias is base on input maximum current to design. The AGND and PGND should be connected by single point grounding to avoid ground level shift. RFF 11 10 9 8 12 For thermal performance, the vias under IC must be placed and least two layers for VIN and PGND trace. The recommended via size is 8 mil drill/16 mil copper width. CFF GND RT6316B The compensation components(RFF and CFF) must be connected as close to the IC as possible. GND NC LX BOOT VIN EN PGND 6 1 2 4 5 3 7 GND Rboot COUT VOUT L GND CIN VIN The input capacitor must be placed as close to the IC as possible for noise immunity and phase ring. LX should be connected to inductor by wide and short trace, and Do NOT use any via for LX. Keep sensitive components away from this area. The VIN trace should be wide enough for high current density application. The number of vias is base on input maximum current to design. The AGND and PGND should be connected by single point grounding to avoid ground level shift. 11 10 9 8 12 For thermal performance, the vias under IC must be placed and least two layers for VIN and PGND trace. The recommended via size is 8 mil drill/16 mil copper width. AGND RT6316C The compensation components(RFF and CFF) must be connected as close to the IC as possible. |
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