100N3LF3 datasheet(4/15 Pages) STMICROELECTRONICS

4 / 15 page

Electrical characteristics

STD100N3LF3 - STU100N3LF3

4/15

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250µA, VGS = 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating @125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

±200

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 40A

VGS = 5V, ID = 20A

0.0045

0.008

0.0055

0.01

Ω

VGS = 10 V,

ID = 40 A @125°C

VGS = 5 V,

ID = 20 A @125°C

0.0068

0.0146

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 10 V, ID = 15A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1 MHz,

VGS = 0

2060

728

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 24V, ID = 80A

VGS = 5V

Figure 15 on page 9

7.5

Gate input resistance

f = 1MHz gate DC Bias = 0

Test signal level = 20mV

Open drain

1.9

Ω

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