BUL742A datasheet(2/5 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

1.78

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 950 V

100

µA

ICEO

Collector Cut-off

Current (IB = 0)

VCE = 400 V

250

µA

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 10 mA

L = 25 mH

400

V(BR)EBO

Emitter-Base

Breakdown Voltage

(IC = 0)

IE = 1 mA

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 1 A

IB = 0.2 A

IC = 3.5 A

IB = 1 A

0.5

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 3.5 A

IB = 1 A

1.5

hFE

∗

DC Current Gain

IC = 800 mA

VCE = 3 V

IC = 10 mA

VCE = 5 V

RESISTIVE LOAD

Storage Time

Fall Time

VCC = 250 V

IC = 2.5 A

IB1 = 0.5 A

IB2 = -1 A

tp = 30

µs

(see figure 2)

0.9

100

µs

Esb

Avalanche Energy

L = 2 mH

(see figure 1)

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Areas

Derating Curve

BUL742A

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