BUL903EDFP datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-Case

Max

Thermal Resistance Junction-Ambient

Max

3.57

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off

Current (VBE = 0)

VCE = 900 V

100

µA

IEBO

Emitter Cut-off

Current (IC = 0)

VEB = 7 V

100

µA

V(BR)CES

Collector-Emitter

Breakdown Voltage

(VBE = 0)

IC = 100

µA

900

VCEO(sus)

∗ Collector-Emitter

Sustaining Voltage

(IB = 0)

IC = 10 mA

L = 25 mH

400

VCE(sat)

∗ Collector-Emitter

Saturation Voltage

IC = 0.5 A

IB = 50 mA

IC = 1 A

IB = 0.15 A

IC = 2 A

IB = 0.4 A

0.5

1.5

VBE(sat)

∗ Base-Emitter

Saturation Voltage

IC = 0.5 A

IB = 50 mA

IC = 1 A

IB = 0.15 A

IC = 2 A

IB = 0.4 A

1.1

1.2

hFE

∗

DC Current Gain

IC = 10 mA

VCE = 5 V

IC = 0.25 A

VCE = 5 V

IC = 0.5 A

VCE = 5 V

IC = 2.5 A

VCE = 5 V

RESISTIVE LOAD

Delay Time

Rise Time

Storage Time

Fall Time

VCC = 125 V

IC = 0.7 A

IB1 = 50 mA

IB2 = 0.4 A

tp = 300

µs

(see figure 1)

0.2

0.8

0.25

µs

Ear

Repetitive Avalanche

Energy

VCC = 50V

C = 1.8 nF

VBE = -5 V

L = 2 mH

(see figure 2)

6mJ

Parallel Diode Forward

Voltage

IF = 2 A

1.2

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

BUL903EDFP

2/7

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