| Electronic Components Datasheet Search |
|
TPA751DR Datasheet(PDF) 16 Page - Texas Instruments |
|
|
|
|||||||||||||||||||||||||||||
TPA751DR Datasheet(HTML) 16 Page - Texas Instruments |
|
16 / 32 page ![]() TPA751 700-mW MONO LOW-VOLTAGE AUDIO POWER AMPLIFIER WITH DIFFERENTIAL INPUTS SLOS336C – DECEMBER 2000 – REVISED OCTOBER 2002 16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 APPLICATION INFORMATION application schematics (continued) It is important to note that using the additional RF resistor connected between IN+ and BYPASS causes VDD/2 to shift slightly, which could influence the THD+N performance of the amplifier. Although an additional external operational amplifier could be used to buffer BYPASS from RF, tests in the lab have shown that the THD+N performance is only minimally affected by operating in the fully differential mode as shown in Figure 27. The following sections discuss the selection of the components used in Figures 26 and 27. component selection gain setting resistors, RF and RI The gain for each audio input of the TPA751 is set by resistors RF and RI according to equation 5 for BTL mode. (5) BTL gain +* 2 R F R I BTL mode operation brings about the factor 2 in the gain equation due to the inverting amplifier mirroring the voltage swing across the load. Given that the TPA751 is a MOS amplifier, the input impedance is very high; consequently input leakage currents are not generally a concern, although noise in the circuit increases as the value of RF increases. In addition, a certain range of RF values is required for proper start-up operation of the amplifier. Taken together it is recommended that the effective impedance seen by the inverting node of the amplifier be set between 5 k Ω and 20 kΩ. The effective impedance is calculated in equation 6. (6) Effective impedance + R F R I R F ) R I As an example, consider an input resistance of 10 k Ω and a feedback resistor of 50 kΩ. The BTL gain of the amplifier would be –10 V/V and the effective impedance at the inverting terminal would be 8.3 k Ω, which is well within the recommended range. For high performance applications, metal film resistors are recommended because they tend to have lower noise levels than carbon resistors. For values of RF above 50 kΩ, the amplifier tends to become unstable due to a pole formed from RF and the inherent input capacitance of the MOS input structure. For this reason, a small compensation capacitor of approximately 5 pF should be placed in parallel with RF when RF is greater than 50 k Ω. This, in effect, creates a low-pass filter network with the cutoff frequency defined in equation 7. (7) –3 dB fc fc + 1 2 pR F C F For example, if RF is 100 kΩ and CF is 5 pF, then fc is 318 kHz, which is well outside of the audio range. |
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |