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BUX98APW Datasheet(PDF) 2 Page - STMicroelectronics

Part # BUX98APW
Description  HIGH VOLTAGE NPN POWER TRANSISTOR
PDF  4 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BUX98APW Datasheet(HTML) 2 Page - STMicroelectronics

  BUX98APW Datasheet HTML 1Page - STMicroelectronics BUX98APW Datasheet HTML 2Page - STMicroelectronics BUX98APW Datasheet HTML 3Page - STMicroelectronics BUX98APW Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-case
Thermal Resistance Junction-case
Max
0.63
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 5
Ω)
VCE = 1000 V
VCE = 1000 V
TC = 125
oC
200
2
µA
mA
ICES
Collector Cut-off
Current (VBE = 0 )
VCE = 1000 V
VCE = 1000 V
TC = 125
oC
200
2
µA
mA
ICEO
Collector Cut-off
Current (IB = 0)
VCE = 450 V
2
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5 V
2
mA
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100 mA
7
V
VCEO(sus)
∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 200 mA
L = 25 mH
450
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 16 A
IB = 3.2 A
1.2
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 16 A
IB = 3.2 A
1.5
V
ton
ts
tf
RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time
VCC = 150 V
IC = 16 A
IB1 = - IB2 = 3.2 A
1
3
0.8
µs
µs
µs
∗ Pulsed: Pulse duration = 300 µs, duty cycle = 1.5 %
BUX98APW
2/4



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