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MJ802 Datasheet(PDF) 1 Page - STMicroelectronics |
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MJ802 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 4 page ![]() MJ802 SILICON NPN POWER TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE DESCRIPTION The MJ802 is a silicon Epitaxial-Base power transistor mounted in Jedec TO-3 metal case. It is intended for general purpose power amplifier and switching applications. ® October 2003 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-emitter Voltage (IB = 0) 90 V VCBO Collector-base Voltage (IE = 0) 100 V VEBO Emitter-Base Voltage (IC = 0) 4 V IC Collector Current 30 A IB Base Current 7.5 A Ptot Total Dissipation at Tc ≤ 25 oC 200 W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM 1/4 |
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