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STB70NF3LL Datasheet(PDF) 5 Page - STMicroelectronics

Part # STB70NF3LL
Description  N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET
PDF  13 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB70NF3LL Datasheet(HTML) 5 Page - STMicroelectronics

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STB70NF3LL
Electrical characteristics
5/13
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 15V
ID = 35A
RG =4.7Ω
VGS = 4.5V
(Resistive Load Figure 16)
23
165
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD= 15V ID= 70A
VGS= 4.5V
24
8.5
12
33
nC
nC
nC
td(off)
tf
Turn-off delay time
Fall time
VDD = 15 V
ID = 35 A
RG =4.7Ω,
VGS = 4.5 V
(Resistive Load Figure 16)
27
28
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current
Source-drain current
(pulsed)
70
280
A
A
VSD
(2)
2.
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Forward on voltage
ISD = 70 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 70 A di/dt = 100A/µs
VDD = 20 V
TJ = 150°C
(see test circuit Figure 14)
42
52
2.5
ns
nC
A



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