Electrical characteristics

STB70NH03L

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Electrical characteristics

Table 3.

On/off states

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Drain-source

breakdown voltage

30

V

Zero gate voltage

1

10

µA

µA

Gate-body leakage

±100

nA

Gate threshold voltage

1

V

Static drain-source on

resistance

0.0075

0.0135

0.0095

0.009

Ω

Ω

Table 4.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

(1)

1.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Forward

transconductance

25

S

Input capacitance

Output capacitance

Reverse transfer

capacitance

2200

380

49

pF

pF

pF

Gate Input Resistance

f = 1 MHz gate DC bias = 0

test signal level = 20 mV

open drain

1.5

Ω

Turn-on delay time

Rise time

Turn-off delay Time

Fall time

21

95

19

15

ns

ns

Total gate charge

Gate-source charge

Gate-drain charge

15.7

8.3

3.4

21

nC

nC

nC

(2)

2.

Gate charge for synchronous operation . See Chapter 6: Appendix A

Third-quadrant gate

charge

15

nC